central central central central central semiconductor corp. semiconductor corp. semiconductor corp. semiconductor corp. semiconductor corp. tm 294 CZT31C npn czt32c pnp 2.0w complementary silicon power transistor sot-223 case description: the central semiconductor CZT31C and czt32c types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 3.0 amps. maximum ratings: (t a =25 o c) symbol units collector-base voltage v cbo 100 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5.0 v collector current i c 3.0 a peak collector current i cm 6.0 a base current i b 1.0 a power dissipation p d 2.0 w operating and storage junction temperature t j ,t stg -65 to +150 o c thermal resistance q ja 62.5 o c/w electrical characteristics: (t a =25 o c unless otherwise noted) symbol test conditions min max units i ces v ce =100v 200 m a i ceo v ce =60v 300 m a i ebo v eb =5.0v 1.0 ma bv ceo i c =30ma 100 v * v ce(sat) i c =3.0a, i b =375ma 1.2 v * v be(on) v ce =4.0v, i c =3.0a 1.8 v * h fe v ce =4.0v, i c =1.0a 25 * h fe v ce =4.0v, i c =3.0a 10 100 f t v ce =10v, i c =500ma, f=1.0mhz 3.0 mhz * pulsed, 2%d.c. new tm 223 power
295 r2 all dimensions in inches (mm). lead code: 1) base 2) collector 3) emitter 4) collector r1
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